Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes
نویسندگان
چکیده
منابع مشابه
Light Extraction Efficiency Enhancement of Colloidal Quantum Dot LightEmitting Diodes Using LargeScale Nanopillar Arrays
Colloidal quantum dots (QDs) offer greatly advantageous features including high emission effi ciency, [ 1,2 ] narrow emission linewidth, [ 3,4 ] tunable emission wavelength, [ 5,6 ] and low-cost solution-processing, [ 7 ] making them one of the most promising materials for lighting-emitting diodes (LEDs). Recently, current-driven quantum dot lighting-emitting diodes (QLEDs) have been intensivel...
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A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED techno...
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Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HT...
متن کاملEffect of asymmetric quantum dot rings in electron transport through a quantum wire
The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...
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ژورنال
عنوان ژورنال: Advanced Science
سال: 2020
ISSN: 2198-3844,2198-3844
DOI: 10.1002/advs.202001760